Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire

摘要

In this article, we estimate hydrostatic stress developed in gallium ionimplanted gallium nitride epitaxial layers using Raman measurements. We havecalculated deformation potential constants for $E_2$(high) mode in theseepi-layers. The presence of a polar phonon-plasmon coupling in these systemshas also been demonstrated. In as-implanted samples, with an increase inimplantation fluence, we have observed disorder-activated Raman scattering.